DocumentCode :
2710101
Title :
Yb impurity influence on parameters of PbTe crystals grown from the melt
Author :
Beshlin, V. ; Lungu, L. ; Nicoric, A. ; Nicorici, Valentina
Author_Institution :
Gebze Inst. of Technol., Turkey
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
131
Abstract :
In the temperature range 77-300 K, the electrophysical properties of PbTe:Yb monocrystals obtained by the Bridgmen method were studied. It was shown that the presence of Yb leads to an improvement of the structural characteristics and the reduction of the charge carrier concentration down to ~1014 cm-3
Keywords :
Hall effect; IV-VI semiconductors; carrier density; crystal growth from melt; crystal microstructure; electrical conductivity; lead compounds; semiconductor doping; semiconductor growth; ytterbium; 77 to 300 K; Bridgmen method; PbTe crystals; PbTe:Yb; PbTe:Yb monocrystals; Yb impurity influence; charge carrier concentration reduction; electrophysical properties; growth from melt; structural characteristics improvement; Atmosphere; Charge carriers; Crystals; Doping; Impurities; Isothermal processes; Physics; Temperature dependence; Temperature distribution; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
Type :
conf
DOI :
10.1109/SMICND.2000.890203
Filename :
890203
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2710101
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