• DocumentCode
    2710152
  • Title

    Simulation of electrical and optical characteristics for InP/InGaAs/InP p-i-n photodiodes

  • Author

    Wang, Xiaodong ; Hu, Weida ; Chen, Xiaoshuang ; Tang, Hengjing ; Li, Tao ; Gong, Haimei ; Lu, Wei

  • Author_Institution
    Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    2D simulation of dark current and photoresponse for InP/InGaAs/InP photodiode is carried out by Sentaurus DEVICE. The simulation results are in good agreement with experiments confirming that generation-recombination effect is the dominant source of dark current at low bias.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical properties; p-i-n photodiodes; 2D simulation; InP-InGaAs-InP; dark current; electrical characteristics; generation-recombination effect; optical characteristics; p-i-n photodiodes; photoresponse; Absorption; Dark current; Doping; Indium gallium arsenide; Indium phosphide; Photodiodes; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612442
  • Filename
    5612442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2710152