• DocumentCode
    2710303
  • Title

    Mechanical properties of boron-carbon-nitrogen coatings obtained by ion beam assisted evaporation

  • Author

    Gago, R. ; Jiménez, I. ; Albella, J.M.

  • Author_Institution
    Inst. de Ciencia de Mater., CSIC, Madrid, Spain
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    189
  • Abstract
    Boron-carbon-nitride films, including amorphous carbon (a-C), carbon nitride (CNx) and ternary compounds (BCxN y), were deposited on silicon substrates by ion beam assisted deposition (IBAD) techniques. The films were deposited by evaporating either graphite or boron carbide (B4C) targets, with simultaneous ion bombardment from a precursor N2+CH4 +Ar gas mixture. IBAD has permitted to cover a wide range of compositions as a function of deposition parameters. The composition and bonding structure of the films have been carefully studied, including analysis with powerful characterisation techniques such as time of flight elastic recoil detection analysis (TOF-ERDA) and X-ray absorption near-edge spectroscopy (XANES). Depending on the growth conditions, the ternary films can form true ternary compounds of segregated grains of three different phases: tetrahedral BN and C, hexagonal BN and C, and icosahedral B12-structures. Mechanical characterisation of the films has been also performed, including measurements of hardness, elastic modulus, and friction coefficients. The optimal values encountered are hardness of ~35 GPa, and friction coefficients of ~0.05. The deposition parameters have been related to the composition bonding structure, and mechanical properties of the coatings
  • Keywords
    XANES; boron compounds; carbon; carbon compounds; elastic moduli; friction; hardness; ion beam assisted deposition; ion-surface impact; time of flight spectra; vacuum deposited coatings; B; B4C evaporation; BC; BCxNy; BCN; BCN coatings; C; CN; CNx; Si substrates; X-ray absorption near-edge spectroscopy; amorphous C; bonding structure; composition; elastic modulus; films; friction coefficients; graphite evaporation; hardness; hexagonal BN; hexagonal C; icosahedral B12-structures; ion beam assisted deposition; ion beam assisted evaporation; mechanical properties; precursor N2/methane/Ar gas mixture; segregated grains; simultaneous ion bombardment; tetrahedral BN; tetrahedral C; time of flight elastic recoil detection analysis; Amorphous materials; Bonding; Boron; Carbon compounds; Coatings; Friction; Ion beams; Mechanical factors; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890215
  • Filename
    890215