DocumentCode
2710521
Title
Electron irradiation effects on static <100> and <111> power MOS-gated devices
Author
Badila, Marian ; Millan, Jose ; Brezeanu, G. ; Godignon, Philippe ; Jordà, Xavier ; Iliescu, Elena ; Banu, Viorel
Author_Institution
IMT Bucharest, Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
251
Abstract
The work provides a complete picture of VDMOS/IGBT silicon power devices static characteristics change under irradiation based on an analysis of the physical mechanisms involved
Keywords
electron beam effects; elemental semiconductors; insulated gate bipolar transistors; power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon; IGBT power devices; Si; Si power devices; VDMOS power devices; electron irradiation effects; static characteristics; static power MOS-gated devices; Dielectric materials; Electron traps; Hydrogen; Insulated gate bipolar transistors; Ionizing radiation; Lattices; Leakage current; Radiative recombination; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890229
Filename
890229
Link To Document