Title :
Electron irradiation effects on static <100> and <111> power MOS-gated devices
Author :
Badila, Marian ; Millan, Jose ; Brezeanu, G. ; Godignon, Philippe ; Jordà, Xavier ; Iliescu, Elena ; Banu, Viorel
Author_Institution :
IMT Bucharest, Romania
Abstract :
The work provides a complete picture of VDMOS/IGBT silicon power devices static characteristics change under irradiation based on an analysis of the physical mechanisms involved
Keywords :
electron beam effects; elemental semiconductors; insulated gate bipolar transistors; power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon; IGBT power devices; Si; Si power devices; VDMOS power devices; electron irradiation effects; static characteristics; static power MOS-gated devices; Dielectric materials; Electron traps; Hydrogen; Insulated gate bipolar transistors; Ionizing radiation; Lattices; Leakage current; Radiative recombination; Silicon; Temperature;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890229
