Title :
Free carrier lifetime reduction in silicon by electron-beam irradiation
Author :
Codreanu, Cecilia ; Vasile, E. ; Iliescu, Elena ; Avram, Marioara ; Badoiu, A. ; Ravariu, C.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
Point defects induced by electron-beam irradiation introduce new recombination centers in the band-gap determining the free carrier lifetime reduction. This effect is successfully used in reduction the switching time of semiconductor devices. Our work presents a model for the free carrier lifetime in silicon that takes into account the influence of concentration and energy level of the recombination centers induced by electron-beam irradiation. The irradiation was made on silicon diodes in a 7 MeV accelerator, in different does and temperature conditions. The simulation procedure consists in modeling the primary defect generation and rescaling the primary defect profile as a function of irradiation temperature. Then carrier lifetime is deduced by using the Shockley-Read-Hall statistics and an experimental database
Keywords :
carrier lifetime; electron beam effects; electron-hole recombination; elemental semiconductors; point defects; power semiconductor diodes; silicon; 7 MeV; Shockley-Read-Hall statistics; Si; electron beam irradiation; free carrier lifetime; gap state; point defect; recombination center; semiconductor device; silicon power diode; switching time; Charge carrier lifetime; Energy states; Photonic band gap; Radiative recombination; Semiconductor devices; Semiconductor diodes; Silicon; Spontaneous emission; Statistics; Temperature;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890230
