Title :
Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior
Author :
Rafael-Valdivia, Guillermo ; Brady, Ronan ; Brazil, Thomas J.
Author_Institution :
Sch. of Electr., Electron. & Mech. Eng., Dublin Univ. Coll.
Abstract :
A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements is presented. DC and pulsed I/V characteristics of these devices are modeled using a single function derived from an existing and well-established MESFET/HEMT nonlinear static current model. The robust methodology in this work can be applied to other current models and subsequently implemented into a new large-signal circuit as a single current source, capable of accurately predicting both static and small-signal performance of FET devices
Keywords :
S-parameters; Schottky gate field effect transistors; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC characteristics; FET devices; HEMT; MESFET; circuit modeling; large-signal circuit; microwave devices; nonlinear static current model; pulsed I/V characteristics; pulsed dynamic behavior; pulsed measurements; scattering parameters; single function drain current model; Equations; HEMTs; Intrusion detection; MESFETs; Mathematical model; Microwave devices; Microwave measurements; Predictive models; Pulse measurements; Voltage; Circuit modeling; FETs; microwave devices; pulsed measurements; scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249595
