DocumentCode :
2710675
Title :
An Ultra Low-Power (⩽13.6 mW/latch) Static Frequency Divider in an InP/InGaAs DHBT Technology
Author :
Griffith, Zach ; Parthasarathy, Navin ; Rodwell, Mark J.W. ; Urteaga, Miguel ; Shinohara, Keisuke ; Rowell, Petra ; Pierson, Richard ; Brar, Bobby
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
506
Lastpage :
509
Abstract :
An ultra-low power static frequency divider with a maximum clock frequency > 61 GHz was designed and fabricated into a 500 nm InP/In 0.53Ga47As/InP double heterojunction bipolar transistor (DHBT) technology utilizing a collector pedestal process for reduced base-collector capacitance Ccb. This is the first reported digital circuit in this material system employing such Ccb reduction techniques. The divider operation is fully static, operating from fclk = 4 GHz to 61.2 GHz while dissipating 27.1 mW of power in the flip-flop from a single -2.30 V supply. The power-delay product of this circuit is 113.0 fJ/latch if all devices in the latch are considered and 63.2 fJ/latch if the power associated with the voltage level-shifting emitter followers is not included in the power-delay calculation. By either method of calculation, this is a record low power-delay product for an InP DHBT-based static frequency divider; more than 2times lower than has been previously reported. The circuit employs the current mode logic (CML) topology and inductive peaking
Keywords :
III-V semiconductors; bipolar integrated circuits; current-mode logic; flip-flops; frequency dividers; gallium arsenide; indium compounds; low-power electronics; microwave power amplifiers; -2.30 V; 27.1 mW; 4 to 61.2 GHz; 500 nm; DHBT technology; InP-In0.53Ga47As-InP; base-collector capacitance; collector pedestal process; current mode logic topology; digital circuit; double heterojunction bipolar transistor technology; flip-flop; static frequency divider; ultra low-power frequency divider; voltage level-shifting emitter followers; Capacitance; Clocks; DH-HEMTs; Digital circuits; Double heterojunction bipolar transistors; Flip-flops; Frequency conversion; Indium gallium arsenide; Indium phosphide; Latches; InP heterojunction bipolar transistor; Static frequency divider;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249621
Filename :
4014945
Link To Document :
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