DocumentCode
2710916
Title
A Linearity Improvement Technique for Thin-film Barium Strontium Titanate Capacitors
Author
Fu, Jia-Shiang ; Zhu, Xinen Alfred ; Chen, Ding-Yuan ; Phillips, Jamie D. ; Mortazawi, Amir
Author_Institution
Michigan Univ., Ann Arbor, MI
fYear
2006
fDate
11-16 June 2006
Firstpage
560
Lastpage
563
Abstract
A device architecture is proposed to improve the linearity of barium strontium titanate (BST) capacitors while maintaining the tunability and the quality factor. Thin-film parallel plate capacitors are fabricated utilizing the proposed architecture. The measurement results successfully demonstrate the effectiveness of this approach. Up to 14 dB of improvement on IIP3 is observed
Keywords
Q-factor; barium compounds; strontium compounds; thin film capacitors; tuning; intermodulation distortion; linearity improvement technique; parallel plate capacitors; quality factor; thin-film barium strontium titanate capacitors; tunable capacitor; Barium; Binary search trees; Capacitors; Electrodes; Ferroelectric materials; Linearity; Strontium; Titanium compounds; Transistors; Voltage; Barium strontium titanate (BST); ferroelectric; intermodulation distortion; linearity; tunable capacitor;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location
San Francisco, CA
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2006.249654
Filename
4014960
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