Title :
Optical Properties of ZnO Thin Films Prepared by Oxidation of Granulated Zn
Author :
Chuah, L.S. ; Hassan, Z. ; Tneh, S.S.
Author_Institution :
Sch. of Distance Educ., Univ. Sains Malaysia, Minden, Malaysia
Abstract :
The thermal evaporation technique was used to deposit the zinc (Zn) films on Si(111) substrates. ZnO thin films were obtained in an inexpensive and simple way by thermally oxidizing granulated Zn films at 900°C in air for 1 hour without any catalyst. ZnO thin films have a hexagonal wurtzite structure. The structural and optical characteristics of ZnO thin films samples were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). PL measurements revealed that the near band edge peak of ZnO samples was blue shifted.
Keywords :
II-VI semiconductors; evaporation; optical properties; oxidation; photoluminescence; scanning electron microscopy; semiconductor thin films; silicon; spectral line shift; substrates; wide band gap semiconductors; zinc compounds; SEM; Si(111) substrates; ZnO; blue shift; granulated zinc; hexagonal wurtzite structure; optical properties; photoluminescence; scanning electron microscopy; temperature 900 degC; thermal evaporation; thermal oxidation; thin films; time 1 hour; Lattices; Optical films; Optical mixing; Optical sensors; Oxidation; Physics; Semiconductor thin films; Substrates; Transistors; Zinc oxide; Si(111); ZnO; thermal evaporation;
Conference_Titel :
Computer Research and Development, 2010 Second International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-0-7695-4043-6
DOI :
10.1109/ICCRD.2010.127
