Title :
Continuous-wave terahertz generation using a vertically integrated horn antenna photomixer
Author :
Peytavit, E. ; Lampin, J.F. ; Hindle, F. ; Yang, C. ; Mouret, G.
Author_Institution :
IEMN, Univ. Lille1, Villeneuve-d´´Ascq, France
Abstract :
A transverse Electromagnetic Horn Antenna is monolithically integrated with a low-temperature-grown GaAs vertical photoconductor on a silicon substrate forming a vertically integrated photomixer. Continuous-wave terahertz radiation is generated at frequencies up to 3.5 THz with a power level reaching 20 nW around 3 THz.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; horn antennas; photoconducting devices; silicon; terahertz wave generation; GaAs; Si; continuous-wave terahertz generation; low-temperature-grown vertical photoconductor; power 20 nW; silicon substrate; transverse electromagnetic horn antenna; vertically integrated horn antenna photomixer; Electrodes; Gallium arsenide; Horn antennas; Integrated circuit modeling; Photoconducting materials; Photodetectors;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612498
