DocumentCode :
2711214
Title :
Crystal growth of BaTiO3 by the TSSG method and its thermal poling
Author :
Chen, Zhiming ; Yamamoto, Kenji ; Adachi, Masatoshi ; Kawabata, Akira
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
Volume :
2
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
651
Abstract :
BaTiO3 single crystals were grown by using the TSSG technique. The seeding process was the most important point in the growth. The dielectric constant was resonant at the cubic-tetragonal transition at Tc=131°C. A thermal poling process was developed in this work. Samples with two parallel or one polished surfaces (±c) were heated to 1100°C, held for 3 hours and then cooled to room temperature. After the thermal poling, an electrical field of about 1 kV/cm was applied along the c direction at a temperature near Tc for 10 hours in order to obtain single-domain BaTiO 3 crystals
Keywords :
barium compounds; crystal growth from solution; dielectric polarisation; ferroelectric materials; ferroelectric transitions; permittivity; 1100 C; BaTiO3; TSSG method; cubic-tetragonal transition; dielectric constant; seeding; single crystal growth; single domain state; thermal poling; Color; Crystalline materials; Crystals; Dielectric constant; Furnaces; Informatics; Optical resonators; Photorefractive materials; Platinum; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.598099
Filename :
598099
Link To Document :
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