DocumentCode
2711281
Title
A test structure for monitoring micro-loading effect of MOSFET gate length
Author
Choi, Joo-Sun ; Chung, In-Sool
Author_Institution
Semicond. R&D Div., Hyundai Electron. Ind. Co. Ltd., Ichon-kun, South Korea
fYear
1996
fDate
25-28 Mar 1996
Firstpage
3
Lastpage
7
Abstract
The etch rate is strongly sensitive to the pattern density on the wafer surface:micro-loading effect. Etch rate data should therefore be obtained from monitoring wafers with a pattern density similar to that of product wafers. This paper presents the test structures which easily incorporate the micro-loading effect of a MOSFET gate length into electrical measurement. Experimental results and analysis shows that the micro-loading effect of gate length depends solely on etch rate problem rather than photolithographic issues
Keywords
MOSFET; etching; production testing; semiconductor device testing; MOSFET gate length; electrical measurement; etch rate; gate length; micro-loading effect; pattern density; test structure; Circuit testing; Electric variables measurement; Etching; Fabrication; Fluctuations; Length measurement; Logic circuits; Logic devices; MOSFET circuits; Monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location
Trento
Print_ISBN
0-7803-2783-7
Type
conf
DOI
10.1109/ICMTS.1996.535612
Filename
535612
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