Title :
Extraction of Electronic Parameters of PEDOT:PSS-PVA/n-Si Heterojunction Diode
Author :
Khan, Dil Nawaz ; Sayyad, Muhammad Hassan
Author_Institution :
Fac. of Eng. Sci., Ghulam Ishaq Khan Inst. of Eng. Sci. & Technol., Swabi, Pakistan
Abstract :
Using spin coating, a PEDOT:PSS-PVA/n-Si device has been fabricated by depositing the composite of conducting polymer PEDOTrPSS and poly(vinyl alcohol) on n-Si substrate. The current-voltage measurements of the device have been evaluated at room temperature in dark. The PEDOT:PSSPVA/n-Si structure demonstrated the rectifying behavior. The various electronic parameters such as rectification ratio, turn on voltage, ideality factor, reverse saturation current, barrier height, series and shunt resistances were extracted from the IV characteristics of this diode. The values of ideality factor and series resistance were also verified by using Cheung functions. In addition, the conduction mechanism in the device was also investigated by I-V curves.
Keywords :
composite materials; elemental semiconductors; polymer films; semiconductor device manufacture; silicon; spin coating; Cheung functions; PEDOT:PSS-PVA device; barrier height; current-voltage measurements; electronic parameter extraction; ideality factor; reverse saturation current; series resistances; shunt resistances; spin coating; Chemicals; Coatings; Fabrication; Heterojunctions; Organic light emitting diodes; Polymers; Semiconductor diodes; Silicon; Substrates; Voltage; Current-voltage (I-V) characteristics; Heterojunction; PEDOT:PSS; PVA; Spin coating; component;
Conference_Titel :
Computer Research and Development, 2010 Second International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-0-7695-4043-6
DOI :
10.1109/ICCRD.2010.114
