DocumentCode
2711346
Title
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs
Author
Gasiot, Gilles ; Soussan, Dimitri ; Autran, Jean-Luc ; Malherbe, Victor ; Roche, Philippe
Author_Institution
Design Enablement Service, STMicroelectron., Crolles, France
fYear
2015
fDate
19-23 April 2015
Abstract
This work reports the complete SEU experimental characterization in 28nm commercial UTBB FDSOI and Bulk technologies subjected to low-energy muons (μ+) and thermal neutrons. FDSOI technology demonstrates a 10x SER decrease for thermal neutrons and a more than 10x SEU occurrence reduction for muons with respect to Bulk technology, evidencing the beneficial role of the UTBB architecture on its radiation hardness level.
Keywords
SRAM chips; elemental semiconductors; radiation hardening (electronics); silicon; silicon-on-insulator; Si; UTBB FD-SOI technology; bulk eSRAM technology; low-energy muons; radiation hardness level; size 28 nm; thermal neutrons SEU characterization; ultrathin body and buried oxide technology; Atmospheric measurements; Atmospheric modeling; Error analysis; Mesons; Neutrons; Protons; Sun; Fully Depleted SOI; Muons; Soft Error Rate; UTBB;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112677
Filename
7112677
Link To Document