DocumentCode
2711384
Title
Terahertz emission from GaN epilayers at lateral electric field
Author
Shalygin, V.A. ; Vorobjev, L.E. ; Firsov, D.A. ; Panevin, V. Yu ; Sofronov, A.N. ; Melentyev, G.A. ; Antonov, A.V. ; Gavrilenko, V.I. ; Suihkonen, S. ; Törma, P.T. ; Ali, Mohamed ; Lipsanen, H.
Author_Institution
St. Petersburg State Polytech. Univ., St. Petersburg, Russia
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
Emission of terahertz radiation from GaN has been observed at electric field exceeding impurity breakdown threshold. Distinctive features of the emission spectra can be assigned to electron transitions between excited and ground states of donors and to hot electron transitions to the donor states.
Keywords
III-V semiconductors; electric field effects; electroluminescence; excited states; gallium compounds; hot carriers; semiconductor epitaxial layers; wide band gap semiconductors; GaN; GaN epilayers; donor states; emission spectra; excited states; ground states; hot electron transitions; impurity breakdown threshold; lateral electric field; terahertz emission; terahertz radiation; Electric breakdown; Electric fields; Electroluminescence; Gallium nitride; Impurities; Photoconductivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612519
Filename
5612519
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