DocumentCode
2711636
Title
Thermal Modelling of IGBT Devices
Author
Trigkidis, G. ; Bousbaine, A. ; Thorn, R.
Author_Institution
Derby Univ.
Volume
2
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
584
Lastpage
588
Abstract
Electro-thermal and thermo mechanical effects are becoming more and more important in power electronic systems as industry seeks to decrease packaging and increase power densities. Therefore the demand for faster and more accurate thermal models is increasing. This paper proposes an improved electro-thermal IGBT model based on a lumped parameter modelling method. The model was developed using MATLAB software (Trigkidis, G, et al., 2002). The electrical model based on Hefners´ IGBT model is further improved using a multi-dimensional model for accurate loss density computation. The development of the thermal model will be presented and the simulated results will be compared with experimental results to corroborate the developed model
Keywords
insulated gate bipolar transistors; lumped parameter networks; mathematics computing; power electronics; semiconductor device models; thermal analysis; Hefners´ model; IGBT devices; MATLAB software; electrical model; electro-thermal effects; lumped parameter modelling; multidimensional model; power densities; power electronic systems; thermal modelling; thermo mechanical effects; Electronic packaging thermal management; Insulated gate bipolar transistors; Mathematical model; Power system modeling; Predictive models; Resistance heating; Slabs; Temperature distribution; Thermal conductivity; Thermal resistance; IGBT; lumped parameter; thermal modelling;
fLanguage
English
Publisher
ieee
Conference_Titel
Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International
Conference_Location
Newcastle-upon-Tyne
Print_ISBN
978-186135-342-9
Type
conf
DOI
10.1109/UPEC.2006.367545
Filename
4218752
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