Performance and RF Reliability of GaN-on-SiC HEMT´s using Dual-Gate Architectures

Author

Vetury, R. ; Shealy, J.B. ; Green, D.S. ; McKenna, J. ; Brown, J.D. ; Gibb, S.R. ; Leverich, K. ; Garber, P.M. ; Poulton, M.J.

Author_Institution

RF Micro Devices, Charlotte, NC

fYear

2006

fDate

11-16 June 2006

Firstpage

714

Lastpage

717

Abstract

AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; stress analysis; stress effects; wide band gap semiconductors; AlGaN-GaN; HEMT; RF reliability; cascode; dual gate device geometry; dual-gate architectures; single gate device geometry; Aluminum gallium nitride; Degradation; Gallium nitride; Geometry; HEMTs; MODFETs; Radio frequency; Radiofrequency identification; Signal processing; Silicon carbide; Cascode; Dual Gate; GaN; HEMT; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249733

Filename

4015004