Igbt Parameter Extraction for the Hefner IGBT Model

Author

Withanage, Ruchira ; Shammas, Noel ; Tennakoorr, S. ; Oates, Colin ; Crookes, Will

Author_Institution

Staffordshire Univ.

Volume

2

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

613

Lastpage

617

Abstract

The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model

Keywords

circuit simulation; insulated gate bipolar transistors; parameter estimation; power electronics; semiconductor device models; 1200 A; 3.3 kV; Hefner IGBT model; circuit simulation; insulated gate bipolar transistor; parameter extraction; power electronics circuits; Analytical models; Capacitance; Circuit simulation; Insulated gate bipolar transistors; MOSFET circuits; Mathematical model; Numerical models; Parameter extraction; Power electronics; Voltage; Hefner model; IGBT; extraction; parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International

Conference_Location

Newcastle-upon-Tyne

Print_ISBN

978-186135-342-9

Type

conf

DOI

10.1109/UPEC.2006.367551

Filename

4218758