DocumentCode
2711738
Title
W-Band Oscillator on Metamorphic HEMT
Author
Kirby, P.L. ; Herrick, K. ; Alm, R. ; Luque, N.A. ; Rodriguez, A. ; Dunleavy, L.P. ; Papapolymerou, J.
Author_Institution
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2006
fDate
11-16 June 2006
Firstpage
735
Lastpage
738
Abstract
We present for the first time an un-buffered W-band oscillator on a metamorphic HEMT GaAs substrate. The oscillator has an output power of +1.5 dBm and a phase noise of -101 dBc/Hz at a 1 MHz offset. This oscillator will be part of an integrated monolithic front end
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; gallium arsenide; integrated circuit design; millimetre wave oscillators; wide band gap semiconductors; W-band oscillator; integrated monolithic front end; metamorphic HEMT; millimeter wave; Acoustic reflection; FETs; Frequency; Gallium arsenide; Indium phosphide; Microwave oscillators; Phase noise; Power generation; Substrates; mHEMTs; HEMT; Metamorphic HEMT; Oscillator; front end; millimeter wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location
San Francisco, CA
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2006.249757
Filename
4015010
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