Title :
Influence of die attachment on MOS transistor matching
Author :
Bastos, J. ; Steyaert, M. ; Graindourze, B. ; Sansen, W.
Author_Institution :
ESAT-MICAS, Katholieke Univ., Leuven, Belgium
Abstract :
A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 μm CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors
Keywords :
MOSFET; internal stresses; microassembling; semiconductor technology; 0.7 micron; CMOS technology; MOS transistor matching; die attachment; eutectic die bonding; polyimide; residual stress; test chip; Area measurement; Degradation; MOSFETs; Measurement standards; Polyimides; Q measurement; Semiconductor device modeling; Testing; Wafer bonding;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535617
