DocumentCode :
2712032
Title :
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells
Author :
Barbato, M. ; Meneghini, M. ; Cester, A. ; Barbato, A. ; Zanoni, E. ; Meneghesso, G. ; Mura, G. ; Tonini, D. ; Voltan, A. ; Cellere, G.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
fYear :
2015
fDate :
19-23 April 2015
Abstract :
The study of the degradation of silicon solar cells submitted to reverse bias stress is of crucial importance since the reliability of an entire PV system can be affected by the presence of weak paths (“hot spots”) on a single solar cell. This paper presents an analysis of the degradation of Metal Wrap Trough solar cells submitted to reverse bias step-stress. We show that the critical sites are in correspondence of the via-holes that connect the top-side metal lines to the back of the cell. Results show that the reverse current flow may induce modification of the shunt resistance of the cells, due to instabilities of the parasitic leakage paths which can be identified by thermal images.
Keywords :
leakage currents; reliability; solar cells; vias; MWT solar cells; PV system; degradation analysis; metal lines; metal wrap trough; parasitic leakage path instability; reliability; reverse bias stress; reverse current flow; shunt resistance; via-holes; Computer architecture; Microprocessors; Photovoltaic cells; Photovoltaic systems; Silicon; Stress; Temperature measurement; MWT solar cells; Reliability; Reverse Stress; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IRPS.2015.7112717
Filename :
7112717
Link To Document :
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