Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

Author

Baeyens, Y. ; Weimann, N. ; Houtsma, V. ; Weiner, J. ; Yang, Y. ; Frackoviak, J. ; Roux, P. ; Tate, A. ; Chen, Y.K.

Author_Institution

Lucent Technol. - Bell Labs., Murray Hill, NJ

fYear

2006

fDate

11-16 June 2006

Firstpage

818

Lastpage

821

Abstract

High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (f_T) and a maximum oscillation frequency (f_max) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge

Keywords

III-V semiconductors; bipolar MIMIC; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 0.45 to 110 GHz; 0.5 micron; 17 dB; 337 GHz; 345 GHz; InGaAs-InP; bipolar transistor amplifiers; distributed amplifier; double-heterojunction bipolar transistor; gain bandwidth product; single-stage amplifiers; Bandwidth; Cutoff frequency; Distributed amplifiers; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical attenuators; Optical modulation; Bipolar transistor amplifiers; distributed amplifiers (DAs); heterojunction bipolar transistors (HBTs);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249798

Filename

4015033