Title :
Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth
Author :
Baeyens, Y. ; Weimann, N. ; Houtsma, V. ; Weiner, J. ; Yang, Y. ; Frackoviak, J. ; Roux, P. ; Tate, A. ; Chen, Y.K.
Author_Institution :
Lucent Technol. - Bell Labs., Murray Hill, NJ
Abstract :
High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge
Keywords :
III-V semiconductors; bipolar MIMIC; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 0.45 to 110 GHz; 0.5 micron; 17 dB; 337 GHz; 345 GHz; InGaAs-InP; bipolar transistor amplifiers; distributed amplifier; double-heterojunction bipolar transistor; gain bandwidth product; single-stage amplifiers; Bandwidth; Cutoff frequency; Distributed amplifiers; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical attenuators; Optical modulation; Bipolar transistor amplifiers; distributed amplifiers (DAs); heterojunction bipolar transistors (HBTs);
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249798
