Title :
Return loss measurement of a microfabricated slow-wave structure for backward-wave oscillation
Author :
Baik, Chan-Wook ; Jun, So Yeon ; Ahn, Ho Young ; Hong, Seogwoo ; Lee, Joo Ho ; Kim, Yongsung ; Lee, Sang Hun ; Yu, SeGi ; Kim, Jong-Min
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
Precise measurement on the RF return loss was performed for a microfabricated slow-wave structure. The interaction circuit was designed to operate at 100 GHz of W-band frequency. A deep reactive ion etching (DRIE) showed a good side-wall profile but inaccurately curved bottom surface. The result represents that the etch rate was strongly dependent on the mask-opening area, which caused a frequency shift of about 5%.
Keywords :
backward wave oscillators; slow wave structures; sputter etching; DRIE; RF return loss; backward-wave oscillation; deep reactive ion etching; frequency 100 GHz; microfabricated slow-wave structure; return loss measurement; Atmospheric measurements; Electromagnetic waveguides; Integrated circuit modeling; Loss measurement; Micromechanical devices; Oscillators; Particle measurements;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612565
