Test structures to measure the Seebeck coefficient of CMOS IC polysilicon

Author

Arx, M. Voin ; Paul, O. ; Baltes, H.

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1996

fDate

25-28 Mar 1996

Firstpage

117

Lastpage

122

Abstract

We report on two thermal characterization structures to measure the Seebeck coefficient α of CMOS IC polysilicon thin films relevant for integrated thermal microtransducers. The test structures were fabricated using the commercial 1.2 μm CMOS process of Austria Mikro Systeme (AMS). The fabrication of the first structure relies on silicon micromachining. In contrast the second, planar, structure is ready for measurement after IC fabrication. The temperature dependent α of the two polysilicon layers of the AMS process were measured with both characterization devices. The agreement between the two data sets validates the new structure

Keywords

CMOS integrated circuits; Seebeck effect; elemental semiconductors; integrated circuit testing; semiconductor thin films; silicon; 1.2 micron; AMS process; CMOS IC; Seebeck coefficient measurement; Si; fabrication; integrated thermal microtransducer; micromachining; planar structure; polysilicon thin film; thermal test structure; Arm; CMOS integrated circuits; CMOS process; Contacts; Fabrication; Integrated circuit testing; Micromachining; Resistors; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535631

Filename

535631