Title :
Terahertz luminescence under continuous wave interband excitation of semiconductors
Author :
Andrianov, A.V. ; Zakhar´in, A.O. ; Zinov´ev, N.N.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
We report on the observation of efficient terahertz emission from semiconductors (n-GaAs) under continuous-wave interband excitation at liquid helium temperatures. The radiative transitions occur under relaxation and trapping of photoexcited electrons to charged donor centers. The external quantum yield of the emission is up to 0.3%.
Keywords :
III-V semiconductors; electron traps; gallium arsenide; liquid phase epitaxial growth; molecular beam epitaxial growth; photoexcitation; photoluminescence; semiconductor growth; terahertz waves; GaAs; charged donor center; continuous wave interband excitation; liquid helium temperature; photoexcited electron; quantum yield; radiative transition; semiconductor materials; terahertz luminescence; Electron optics; Gallium arsenide; Impurities; Laser excitation; Measurement by laser beam; Radiative recombination;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612569
