• DocumentCode
    2712228
  • Title

    Development of Germanium BIB detector with surface activated bonding and Molecular-Beam Epitaxial crystal growth

  • Author

    Wada, T. ; Kaneda, H. ; Kano, R. ; Wada, K. ; Suzuki, T. ; Watanabe, K. ; Kiriyama, Y.

  • Author_Institution
    Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Sagamihara, Japan
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We are developing Germanium BIB detector for future mid- and far-infrared astronomical missions. In order to obtain clear interface between blocking and IR active layers, we have tested two new method, Surface Activated Bonding (SAB) and Molecular Beam Epitaxial (MBE) crystal growth.
  • Keywords
    crystal growth from vapour; elemental semiconductors; germanium; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; Ge; IR active layer; blocked impurity band detector; blocking layer; clear interface; far-infrared astronomical missions; germanium BIB detector; midinfrared astronomical missions; molecular-beam epitaxial crystal growth; surface activated bonding; Bonding; Detectors; Epitaxial layers; Germanium; Light sources; Molecular beam epitaxial growth; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612570
  • Filename
    5612570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2712228