Title :
Development of Germanium BIB detector with surface activated bonding and Molecular-Beam Epitaxial crystal growth
Author :
Wada, T. ; Kaneda, H. ; Kano, R. ; Wada, K. ; Suzuki, T. ; Watanabe, K. ; Kiriyama, Y.
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Sagamihara, Japan
Abstract :
We are developing Germanium BIB detector for future mid- and far-infrared astronomical missions. In order to obtain clear interface between blocking and IR active layers, we have tested two new method, Surface Activated Bonding (SAB) and Molecular Beam Epitaxial (MBE) crystal growth.
Keywords :
crystal growth from vapour; elemental semiconductors; germanium; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; Ge; IR active layer; blocked impurity band detector; blocking layer; clear interface; far-infrared astronomical missions; germanium BIB detector; midinfrared astronomical missions; molecular-beam epitaxial crystal growth; surface activated bonding; Bonding; Detectors; Epitaxial layers; Germanium; Light sources; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612570
