DocumentCode
2712263
Title
Light Emission and Detection for Si Photonics
Author
Wada, Kazumi
Author_Institution
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
fYear
2008
fDate
8-11 Dec. 2008
Firstpage
1
Lastpage
3
Abstract
The present paper reviews the current status of light emission and detection for Si Photonics. To control the initial and final stages, strain engineering of bandgap and resonator structures are indispensable for light emission. A new non-thermal approach to reduce reverse leakage current is proposed controlling the electric field strength. These together with modulation reported recently on Ge platform clearly indicates that Ge is one of the most important materials as far as active components are concerned.
Keywords
CMOS integrated circuits; elemental semiconductors; energy gap; germanium; integrated optics; leakage currents; light emitting diodes; photodiodes; silicon; Ge; Si; bandgap; electric field strength; light detection; light emission; resonator structures; reverse leakage current reduction; silicon light emitter; silicon photonics; CMOS technology; Capacitive sensors; Cooling; Erbium; Light emitting diodes; Optical control; Photonic band gap; Potential well; Strain control; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location
Singapore
Print_ISBN
978-1-4244-3901-0
Electronic_ISBN
978-1-4244-2906-6
Type
conf
DOI
10.1109/IPGC.2008.4781298
Filename
4781298
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