DocumentCode
2712315
Title
Device Analysis of Linearity in RF Power Devices by Harmonic Balance Device Simulation
Author
Tornblad, Olof ; Ma, Gordon ; Dutton, Robert W.
Author_Institution
Infineon Technol., North America Corp., Morgan Hill, CA
fYear
2006
fDate
11-16 June 2006
Firstpage
868
Lastpage
871
Abstract
Low distortion is one of the most important concerns for current and next-generation wireless communication systems. In this work, the linearity of RF power MOS devices are analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) were investigated and interpreted in terms of bias and device design parameters. The demonstrated methodology helps in laying ground-work for improved device design and investigation of new device concepts for improved linearity
Keywords
3G mobile communication; UHF field effect transistors; UHF power amplifiers; power MOSFET; 2.1 GHz; 45 W; IM3; RF power MOS linearity; harmonic balance device simulation; intermodulation distortion product; power MOSFET; Analytical models; Circuit simulation; Circuit testing; Doping; Drives; Harmonic analysis; Linearity; North America; Power system harmonics; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location
San Francisco, CA
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2006.249829
Filename
4015047
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