Title :
Silicon Photonic Crystal Surface Mode Microcavities
Author_Institution :
Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol. (KTH), Kista
Abstract :
High-Q surface mode micro-cavities in silicon-on-insulator (SOI) structures are investigated. Cavity structures in amorphous silicon based SOI structures show intrinsic Q values of 2000, while cavities in crystalline SOI structures can have intrinsic Q values larger than 104.
Keywords :
amorphous semiconductors; integrated optics; microcavities; optical fabrication; optical materials; optical waveguides; photonic crystals; silicon-on-insulator; SOI structure; Si-SiO2; amorphous structure; crystalline structure; high-Q surface mode microcavity; optical fabrication; photonic crystal; photonic integrated circuit; quality factor value; silicon wire waveguide; silicon-on-insulator; Amorphous silicon; Crystallization; Microcavities; Optical surface waves; Optical waveguides; Photonic crystals; Photonic integrated circuits; Slabs; Surface waves; Wire;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781302
