DocumentCode :
2712386
Title :
Ultra-compact silicon-on-insulator optical filter based on sidewall Bragg grating
Author :
Tu, Xiaoguang ; Chen, Shaowu ; Yu, Jinzhong ; Wang, Qiming ; Chin, Mee Koy
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
fYear :
2008
fDate :
8-11 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Micro-cavity structure composed of silicon wire with 240 nm square cross section and two symmetrical sidewall waveguide Bragg gratings is fabricated and studied for the operation under telecommunication wavelengths. Optical filter of quasi-TE mode was realized based on this cavity. In such micro-cavity, optical quality factor (Q) was measured up to 380 with a 4.8 nm free spectral range (FSR) and 12 dB fringe contrast (FC). The measured group index of silicon waveguide with only 240 nm square cross section was between 3.80 and 5.43. It is the first time group delay of silicon wire waveguide with such small core dimension is studied. Larger group delay can be expected after optimizing the design parameters and the fabrication process.
Keywords :
Bragg gratings; Q-factor; integrated optoelectronics; micro-optics; microcavities; optical communication equipment; optical design techniques; optical fabrication; optical filters; silicon compounds; silicon-on-insulator; Si-SiO2; free spectral range; fringe contrast; microcavity filter; optical fabrication; optical quality factor; quasiTE mode; sidewall waveguide Bragg grating; silicon wire waveguide; ultra-compact silicon-on-insulator optical filter; wavelength 4.8 nm; Bragg gratings; Delay effects; Optical filters; Optical waveguides; Propagation delay; Q factor; Q measurement; Silicon on insulator technology; Wavelength measurement; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
Type :
conf
DOI :
10.1109/IPGC.2008.4781306
Filename :
4781306
Link To Document :
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