Title :
Broadband Flat-top Superluminescent Diode with Low Spectral Modulation at 850 nm
Author :
Dimas, C.E. ; Tan, C.L. ; Hongpingyo, V. ; Ding, Y.H. ; Djie, H.S. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
The broadest bandwidth (80 nm) superluminescent diode (SLD) with center wavelength at 850 nm fabricated on GaAs/AlGaAs double quantum-well structure is characterized and analyzed. The broadband flat-top like spectrum and a 0.3 dB spectral modulation enable this device to produce an axial resolution of 4 mum in optical coherence tomography systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; superluminescent diodes; GaAs-AlGaAs; broadband flat-top superluminescent diode; double quantum-well structure; optical coherence tomography systems; spectral modulation; wavelength 850 nm; Bandwidth; Epitaxial growth; Etching; Gallium arsenide; Optical interferometry; Optical modulation; Optical sensors; Quantum well devices; Stimulated emission; Superluminescent diodes;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781308
