A 3-Watt Q-Band GaAs pHEMT Power Amplifier MMIC For High Temperature Operation

Author

Colomb, Francois Y. ; Platzker, Aryeh

Author_Institution

Raytheon RF Components, Andover, MA

fYear

2006

fDate

11-16 June 2006

Firstpage

897

Lastpage

900

Abstract

A three-stage Q-band pHEMT power amplifier for 42-46GHz operation has been designed and built. The conservative stage peripheries of 2.64:5.28:7.68mm were chosen to ensure high temperature operation. Although designed for a nominal bias of 5.5V and 170mA/mm, the amplifier operates with biases of 2-6V and 65-190mA/mm. Record powers for this frequency range have been obtained. Biased at 6V and 170mA/mm the amplifier provided 4W of power at 20% efficiency over 42.5-43GHz at 30degC, and an average of 3W with 17% efficiency over 43.5-45.5GHz at 90degC. At 5.5V and 128mA/mm an average power of 3W with 20% efficiency was obtained over 43.5-45.5GHz at room temperature

Keywords

gallium arsenide; high-temperature electronics; millimetre wave power amplifiers; power HEMT; 2 to 6 V; 3 W; 30 C; 4 W; 42 to 46 GHz; 90 C; GaAs; Q-Band; conservative stage peripheries; high temperature operation; pHEMT power amplifier MMIC; Gallium arsenide; High power amplifiers; MMICs; Operational amplifiers; PHEMTs; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Temperature; MMICs; Millimeter wave power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249837

Filename

4015055