Equivalent circuit model for the switching conduction characteristics of TiO2-based MIM structures

An equivalent electrical circuit model for the switching conduction characteristics of TiO₂-based metal-insulator-metal structures is proposed. The model consists of two antiparallel diodes in combination with series and parallel resistances, which represent the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects, respectively. The diode parameters are expressed by sigmoidal-type threshold functions which account for the transition between the low and high resistance states.