Title :
New TDDB lifetime model for AC inverter-like stress in advance FinFET structure
Author :
Chen, I.K. ; Chen, C.L. ; Lee, Y.-H. ; Lu, R. ; Lee, Y.W. ; Hsu, H.H. ; Tseng, Y.W. ; Lin, Y.W. ; Shih, J.R.
Author_Institution :
Technol. Quality & Reliability Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
Abstract :
A new TDDB lifetime model is proposed to predict lifetime for AC inverter-like stress in FinFET device. The AC lifetime is governing by four mechanisms, including voltage switching, electron detrapping, HCI and hole injection. Among them, voltage switching and electron detrapping improve TDDB lifetime; while HCI and hole injection degrade the lifetime.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; AC inverter-like stress; AC lifetime prediction; FinFET device; HCI; TDDB lifetime model; advance FinFET structure; electron detrapping; hole injection; voltage switching; Charge carrier processes; Human computer interaction; Logic gates; MOS devices; Stress; Switches; Transient analysis; AC inverter-like; HCI; electron detrapping; hole injection; transient duty ratio (TDR); voltage switching;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112741
