Improvement of Class E Amplifier with Inductive Clamp Circuit Topology and Its Applications

A class E amplifier with inductive clamp circuit topology is improved to have stability for all load conditions at any DC supply voltage, V_dc. Based on the new improved topology, the RF Amplifier is designed, simulated and built to be used as a driver for any class of RF amplifier operating within five percent of frequency bandwidth. It is shown that class E amplifiers with inductive clamp circuits using an improved topology give all the benefits of class E amplifiers with inductive clamp circuits and in addition have minimum spurious oscillations and harmonic levels. The improved topology and results that we introduce here can be employed in RF applications where the signal purity over entire VSWR and dynamic range is one of the amplifier requirements such as plasma excitation