Gain and alpha factor of intermixed InAs/InAlGaAs quantum-dash lasers

Author

Chen, C. ; Wang, Y. ; Tan, C.L. ; Djie, H.S. ; Ooi, B.S. ; Hwan, J. C M

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

We study the optical gain and alpha factor of InAs/InAlGaAs quantum-dash lasers on InP substrate after being subjected to the postgrowth intermixing process. The intermixing was achieved using dielectric capping process that involves the deposition of dielectric film and subsequent rapid thermal annealing. Compared to the un-intermixed laser, we found that the intermixed lasers with a 93 nm bandgap blue-shift exhibit good material quality with improved differential gain and comparable alpha factor.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum dash lasers; rapid thermal annealing; spectral line shift; InAs-InAlGaAs; InP substrate; alpha factor; blue-shift; dielectric capping; intermixed quantum-dash lasers; optical gain; rapid thermal annealing; Dielectrics; Laser transitions; Optical films; Optical refraction; Optical variables control; Photonic band gap; Quantum dot lasers; Quantum dots; Rapid thermal annealing; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781313

Filename

4781313