In-N co-doped P-type ZnO films electrical prepared by modified ion beam enhanced deposition

Author

Jinhua, Li ; Daohua, Zhao ; Yan, Wang ; Meng, Zhao ; Weifeng, Zheng ; Ningyi, Yuan

Author_Institution

Dept of Electr. & Electron. Eng., Jiangsu Polytech. Univ., Changzhou

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In-N co-doped P-type ZnO films were prepared on SiO₂ and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10^-3 Omegamiddotcm, 35.9 cm²/VmiddotS and 1.66times10²⁰/cm³ after annealing at 600degC for 30 min, respectively.

Keywords

Hall effect; II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; carrier density; carrier mobility; electrical resistivity; indium compounds; ion beam assisted deposition; semiconductor doping; semiconductor thin films; silicon compounds; wide band gap semiconductors; zinc compounds; AFM; Hall effect measurement; IBED method; SiO₂; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; ZnO:InN; annealing process; atomic force microscopy; carrier concentration; carrier mobility; co-doped P-type film preparation; film electrical properties; film optical properties; film structure characterisation; glass substrate; modified ion beam enhanced deposition; polycrystalline film; sheet resistivity; temperature 600 degC; time 30 min; Annealing; Conductivity; Glass; Ion beams; Optical films; Particle beam optics; Substrates; Testing; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781316

Filename

4781316