• DocumentCode
    2712707
  • Title

    1.3μm Quantum Dot Self-Aligned Stripe Laser

  • Author

    Groom, K.M. ; Assamoi, P.J. ; Hugues, M. ; Roberts, J.S. ; Stevens, B.J. ; Childs, D.T.D. ; Alexander, R.R. ; Hopkinson, M. ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron.&Electr. Eng., Univ. of Sheffield, Sheffield
  • fYear
    2008
  • fDate
    8-11 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at 1.3 mum. Opto-electronic confinement provided by an InGaP layer results in single lateral mode emission.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser beams; laser modes; optoelectronic devices; quantum dot lasers; semiconductor quantum dots; InGaP; opto-electronic confinement; quantum dot laser; self-aligned stripe technique; single lateral mode emission; wavelength 1.3 mum; Carrier confinement; Gallium arsenide; Indium phosphide; Laser modes; Manufacturing; Optical device fabrication; Quantum dot lasers; Radiative recombination; Substrates; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-3901-0
  • Electronic_ISBN
    978-1-4244-2906-6
  • Type

    conf

  • DOI
    10.1109/IPGC.2008.4781323
  • Filename
    4781323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2712707