• DocumentCode
    271271
  • Title

    Quality assessment of GaAs laser diodes with InAs quantum dots layer by low-frequency noise measurements

  • Author

    Chobola, Z. ; Luňák, M. ; Vaněk, J. ; Hulicius, E.

  • Author_Institution
    Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    349
  • Lastpage
    352
  • Abstract
    This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.
  • Keywords
    1/f noise; III-V semiconductors; gallium arsenide; indium compounds; laser noise; noise measurement; semiconductor lasers; semiconductor quantum dots; 1/f noise; GaAs; InAs; low-frequency noise measurements; noise analysis; noise spectral density; noise spectroscopy; quality assessment; quantum dots layer; semiconductor lasers diodes; Diode lasers; Gallium arsenide; Noise; Noise measurement; Reliability; Semiconductor device measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842161
  • Filename
    6842161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=271271