Title :
Quality assessment of GaAs laser diodes with InAs quantum dots layer by low-frequency noise measurements
Author :
Chobola, Z. ; LunÌŒaÌk, M. ; VaneÌŒk, J. ; Hulicius, E.
Author_Institution :
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
Abstract :
This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; indium compounds; laser noise; noise measurement; semiconductor lasers; semiconductor quantum dots; 1/f noise; GaAs; InAs; low-frequency noise measurements; noise analysis; noise spectral density; noise spectroscopy; quality assessment; quantum dots layer; semiconductor lasers diodes; Diode lasers; Gallium arsenide; Noise; Noise measurement; Reliability; Semiconductor device measurement; Silicon;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842161
