Title :
Long-term data for BTI degradation in 32nm IBM microprocessor using HKMG technology
Author :
Pong-Fei Lu ; Jenkins, Keith A. ; Muller, K. Paul ; Schaufler, Ralf
Author_Institution :
IBM Res., Thomas J. Watson Center, Yorktown Heights, NY, USA
Abstract :
This paper describes the measured long-term BTI field data from IBM zEnterprise EC12 systems in 32nm High-k/Metal Gate (HKMG) technology using a built-in monitor which is capable of separating the PBTI and the NBTI effects. The BTI monitor is accompanied by a digital thermal sensor in close proximity to correlate the BTI degradation with temperature. Comparable PBTI and NBTI degradation in use condition were observed. Compared with previous z196 microprocessor with 45nm SiON CMOS technology, the new 32nm zEC12 showed more than 2X less BTI degradation. This is attributed to HKMG technology optimization and lower chip voltages.
Keywords :
high-k dielectric thin films; integrated circuit reliability; microprocessor chips; negative bias temperature instability; BTI degradation; BTI monitor; CMOS technology; HKMG technology; IBM microprocessor; IBM zEnterprise EC12 systems; NBTI effect; PBTI effect; built-in monitor; digital thermal sensor; high-k-metal gate technology; long-term BTI field data; size 32 nm; size 35 nm; z196 microprocessor; Degradation; Microprocessors; Monitoring; Ring oscillators; Stress; Temperature measurement; Temperature sensors; BTI; NBTI; PBTI; monitor;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112756
