Long-term data for BTI degradation in 32nm IBM microprocessor using HKMG technology

Author

Pong-Fei Lu ; Jenkins, Keith A. ; Muller, K. Paul ; Schaufler, Ralf

Author_Institution

IBM Res., Thomas J. Watson Center, Yorktown Heights, NY, USA

fYear

2015

fDate

19-23 April 2015

Abstract

This paper describes the measured long-term BTI field data from IBM zEnterprise EC12 systems in 32nm High-k/Metal Gate (HKMG) technology using a built-in monitor which is capable of separating the PBTI and the NBTI effects. The BTI monitor is accompanied by a digital thermal sensor in close proximity to correlate the BTI degradation with temperature. Comparable PBTI and NBTI degradation in use condition were observed. Compared with previous z196 microprocessor with 45nm SiON CMOS technology, the new 32nm zEC12 showed more than 2X less BTI degradation. This is attributed to HKMG technology optimization and lower chip voltages.

Keywords

high-k dielectric thin films; integrated circuit reliability; microprocessor chips; negative bias temperature instability; BTI degradation; BTI monitor; CMOS technology; HKMG technology; IBM microprocessor; IBM zEnterprise EC12 systems; NBTI effect; PBTI effect; built-in monitor; digital thermal sensor; high-k-metal gate technology; long-term BTI field data; size 32 nm; size 35 nm; z196 microprocessor; Degradation; Microprocessors; Monitoring; Ring oscillators; Stress; Temperature measurement; Temperature sensors; BTI; NBTI; PBTI; monitor;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112756

Filename

7112756