Title :
Simulation of Semiconductor media in Photonic Devices using the Dynamic Thermal Electron Quantum Medium FDTD model
Author :
Ravi, K. ; Lai, Y. ; Huang, Y. ; Ho, Seng-Tiong
Author_Institution :
Data Storage Inst., Singapore
Abstract :
The capabilities of the Dynamic Thermal Electron Quantum Medium FDTD (DTEQM-FDTD) model in simulating semiconductor media and devices are illustrated. Both transient and steady-state carrier dynamics, along with associated physical phenomena are obtained. Using the same computational model, the operational dynamics of a Fabry-Perot laser cavity are further illustrated.
Keywords :
Fabry-Perot resonators; finite difference time-domain analysis; laser beams; laser cavity resonators; semiconductor lasers; Fabry-Perot laser cavity; dynamic thermal electron quantum medium FDTD model; photonic devices; semiconductor media simulation; steady-state carrier dynamics; Charge carrier density; Computational modeling; Electrons; Energy states; Fabry-Perot; Finite difference methods; Laser modes; Quantum computing; Steady-state; Time domain analysis;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781329
