Quantum Confine Stark Effect Suppressed Nanorod Structure Light Emitting Diode

Author

Chen, Liang-Yi ; Wang, Cheng-Yin ; Chen, Cheng-Pin ; Cheng, Yun-Wei ; Ke, Min-Yung ; Huang, JianJang

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We present a practical process to fabricate InGaN/GaN multiple-quantum-well nanorod structure. The nanorod light emitting diode array is realized by using monolayer silica nano-particle as nano-mask to define nanorod structure and a space layer to prevent p-type contact from connecting n-type GaN. The quantum confine stark effect is suppressed in nanorod device which is proved by electroluminescence peak wavelength of nanorod LEDs. These peaks of nanorod LEDs are nearly constant at an injection current between 25 mA and 100 mA.

Keywords

III-V semiconductors; electroluminescence; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; nanofabrication; nanoparticles; nanophotonics; optical fabrication; optical materials; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; silicon compounds; InGaN-GaN; current 25 mA to 100 mA; electroluminescence; injection current; monolayer silica nanoparticles; multiple-quantum-well nanorod structure; nanomask; nanorod LED device; nanorod light emitting diode array; quantum confined stark effect suppression; Gallium nitride; Joining processes; Light emitting diodes; Nanoscale devices; Nanostructures; Optical arrays; Potential well; Quantum well devices; Silicon compounds; Stark effect;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781332

Filename

4781332