DocumentCode
271285
Title
Parameters influencing the maximum controllable current in gate commutated thyristors
Author
Lophitis, N. ; Antoniou, M. ; Udrea, F. ; Nistor, I. ; Arnold, Martin ; Wikström, Tobias ; Vobecky, J.
Author_Institution
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Volume
8
Issue
3
fYear
2014
fDate
May-14
Firstpage
221
Lastpage
226
Abstract
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
Keywords
electric current control; optimisation; thyristors; voltage control; GCT; buffer peak concentration; dynamic performance; gate commutated thyristors; interconnected numerical device segments model; large area full wafer devices; maximum controllable current; optimisation tool; p-base depth; shallow p-base thickness;
fLanguage
English
Journal_Title
Circuits, Devices & Systems, IET
Publisher
iet
ISSN
1751-858X
Type
jour
DOI
10.1049/iet-cds.2013.0217
Filename
6824030
Link To Document