• DocumentCode
    2712873
  • Title

    SRAM Vmax stability considerations

  • Author

    Burnett, D. ; Balasubramanian, S. ; Joshi, V. ; Parihar, S. ; Higman, J. ; Weintraub, C.

  • Author_Institution
    Global Memory Solutions, GLOBALFOUNDRIES Inc., Austin, TX, USA
  • fYear
    2015
  • fDate
    19-23 April 2015
  • Abstract
    The voltage overdrive of SRAM cells is shown to be of concern as the stability at Vmax can be worse than at Vmin. The Vmax stability is especially sensitive to high resistances on single devices in the bitcell. Highlighted in this paper are SRAM Vmax stability issues observed in a 28nm technology as well as the increased susceptibility of FinFET SRAM cells for voltage overdrive issues.
  • Keywords
    MOSFET; SRAM chips; circuit stability; FinFET SRAM cell; SRAM Vmax stability; size 28 nm; voltage overdrive; FinFETs; High definition video; Resistance; SRAM cells; Stability analysis; Thermal stability; BTI; FinFET; SRAM; Vmax; Vmin; dynamic voltage; overdrive; reliability; resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112760
  • Filename
    7112760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2712873