Title :
A new method to determine effective channel length, series resistance and threshold voltage
Author :
Sasaki, Makoto ; Ito, Hiroshi ; Horiuchi, Tadahiko
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
This paper describes a new method to determine the parameters of MOSFETs with deep-submicron channel length. The model shows that threshold voltage defined by Id/√(gm)-Vg plot is consistent with the extracted effective channel length and series resistance. The experimental data show good linearity for the parameter extraction down to a 0.24 μm transistor. The model is also found to be in good agreement for reproducing Id-Vg curves
Keywords :
MOSFET; semiconductor device models; 0.24 micron; I-V characteristics; deep-submicron MOSFET; effective channel length; linearity; model; parameter extraction; series resistance; threshold voltage; Data mining; Electric resistance; Equations; Indium tin oxide; Laboratories; MOSFET circuits; National electric code; Parameter extraction; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535635
