High voltage pulse power implementation using IGBT stacks

Author

Jong-Hyun Kim ; Myung-Hyo Ryu ; Byung-Duk Min ; Ju-Won Baek ; Jong-Soo Kim ; Geun-Hie Rim

Author_Institution

Korea Electrotechnology Research Institute (KERI), Industry Application Research Laboratory, P.O. Box 20, Changwon, 641-120, Korea, Email: kimjh@keri.re.kr

fYear

2006

fDate

18-22 June 2006

Firstpage

1

Lastpage

5

Abstract

High voltage pulse power implementation using IGBT stacks is proposed in this paper. High voltage pulse power implementation uses Marx circuit as the main circuit. The Marx circuit is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. Diode stacks and inductor are used to charge high voltage capacitor of each stage without power loss, These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed pulse power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental and simulated results are included to verify the system performances in this paper.

Keywords

Capacitors; Inductors; Insulated gate bipolar transistors; Power generation; Power semiconductor switches; Pulse circuits; Pulse generation; Semiconductor diodes; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

ISSN

0275-9306

Print_ISBN

0-7803-9716-9

Type

conf

DOI

10.1109/PESC.2006.1711971

Filename

1711971