DocumentCode
2712997
Title
Recent achievements in Photonic Crystal microcavities in III-V semiconductors
Author
Tran, Nguyen-Vi-Quynh ; Combrié, Sylvain ; De Rossi, Alfredo
Author_Institution
Thales Res. & Technol., Palaiseau
fYear
2008
fDate
8-11 Dec. 2008
Firstpage
1
Lastpage
3
Abstract
We have established high quality fabrication process for photonic crystals (PhC) devices, based on III-V semiconductors. We achieved a new record for the Q-factor of microcavities (700,000). This value is close to state of the art of devices fabricated with industrial grade CMOS lines. Based on this, we investigated nonlinear phenomena with ultra-low power. We also introduced new designs such to dramatically improve input/output coupling.
Keywords
III-V semiconductors; Q-factor; micro-optics; microcavities; optical design techniques; optical fabrication; optical materials; photonic crystals; III-V semiconductors; Q-factor microcavity; high-quality fabrication process; industrial grade CMOS line; nonlinear phenomena; photonic crystal device; photonic crystal microcavity; Fabrication; Finite difference methods; Gallium arsenide; III-V semiconductor materials; Lattices; Microcavities; Photonic crystals; Q factor; Q measurement; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location
Singapore
Print_ISBN
978-1-4244-3901-0
Electronic_ISBN
978-1-4244-2906-6
Type
conf
DOI
10.1109/IPGC.2008.4781341
Filename
4781341
Link To Document