DocumentCode :
2713015
Title :
Two-dimensional Photonic Crystal Patterns for Vertical Light Extraction Enhancement from Ultra-thin Amorphous Si/Si3N4 Multilayer stack
Author :
Ren, Fang-Fang ; Yu, M.B. ; Ye, J.D. ; Chen, Q. ; Tan, S.T. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore
fYear :
2008
fDate :
8-11 Dec. 2008
Firstpage :
1
Lastpage :
3
Abstract :
We integrated two-dimensional photonic crystal patterns with triangular lattice of air holes in the amorphous Si/Si3N4 multilayer stack to compensate for the poor internal brightness. The significant light extraction enhancement can be observed in the third direction, implying the spontaneous emission band strongly coupling with the resonant radiation band or leaky conduction band modes of the photonic crystal slabs at Gamma point in the photonic band structures.
Keywords :
amorphous semiconductors; brightness; conduction bands; elemental semiconductors; integrated optics; multilayers; photonic band gap; photonic crystals; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; slabs; spontaneous emission; Si-Si3N4; leaky conduction band modes; photonic band structures; photonic crystal slabs; resonant radiation band modes; spontaneous emission band; triangular lattice; two-dimensional photonic crystal patterns; ultrathin amorphous multilayer stack; vertical light extraction enhancement; Amorphous materials; Brightness; Fabrication; Lattices; Nonhomogeneous media; Optical coupling; Photonic crystals; Quantum well devices; Resonance; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
Type :
conf
DOI :
10.1109/IPGC.2008.4781342
Filename :
4781342
Link To Document :
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