• DocumentCode
    2713107
  • Title

    Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures

  • Author

    Suzuki, Safumi ; Teranishi, Atsushi ; Asada, Masahiro ; Sugiyama, Hiroki ; Yokoyama, Haruki

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Technol., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We obtained increase in oscillation frequency of resonant tunneling diodes (RTDs) using graded emitter and thin barriers for reduced transit and tunneling times. The fundamental oscillation frequency of 1.04 THz was achieved with this structure. The dependence of output power on oscillation frequency is also shown. The output power was around 10 μW in 0.9-1 THz region.
  • Keywords
    oscillations; resonant tunnelling diodes; frequency 1.04 THz; fundamental oscillation frequency; graded emitter structures; resonant tunneling diode; thin barrier; Current density; Delay; Oscillators; Power generation; Resonant frequency; Time frequency analysis; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612616
  • Filename
    5612616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2713107