DocumentCode
2713128
Title
GaAs-oscillators of mm-range with small levels of power consumption for engineering of nanostructures
Author
Prokhorov, Eduard D. ; Dyadchenko, Anatoliy V. ; Mishnyov, Anatoliy A. ; Polyansky, Nikolay E.
Author_Institution
Karazin Kharkiv Nat. Univ., Ukraine
Volume
2
fYear
2005
fDate
12-17 Sept. 2005
Firstpage
78
Abstract
Oscillators are experimentally investigated on the basis of GaAs Gunn-diodes with small levels of power consumption 10...30 mW. useful microwave power 0.1...0.3 mW with efficiency 1...2% in a range of frequencies 65...75 GHz.
Keywords
Gunn diodes; III-V semiconductors; gallium arsenide; integrated optoelectronics; microwave oscillators; nanostructured materials; nanotechnology; power consumption; 1 to 2 percent; 10 to 30 mW; 65 to 75 GHz; GaAs; GaAs Gunn-diodes; GaAs-oscillators; millimeter-range oscillators; nanostructure engineering; power consumption; Energy consumption; Frequency; Gallium arsenide; Microwave oscillators; Nanostructures; Power engineering and energy; Power generation; Radiometers; Semiconductor device manufacture; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN
0-7803-9130-6
Type
conf
DOI
10.1109/CAOL.2005.1553923
Filename
1553923
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